SK Hynix confirmed in a blog post that it will start developing the next-generation HBM4 high-bandwidth memory in 2024. So far, we have seen Micron and Samsung list their next-generation HBM4 memory products, confirming this development. Both companies have emphasized a release timeframe of around 2025-2026. According to SK Hynix’s latest confirmation, the company also announced plans to begin production of the next-generation high-bandwidth memory in 2024.
Regarding HBM products, Senior Manager Kim Wang-soo emphasized that the company will mass-produce its HBM3E solution in 2024, an enhanced variant of the existing HBM3 memory. The new memory will offer higher speed and capacity. However, in the same year, SK Hynix also plans to commence the development of HBM4 memory, marking a significant step in the evolution of HBM product stacks.
The competitive advantage will continue into the next year. GSM team leader Kim Wang-soo stated, ‘With the large-scale production and sale of HBM3E planned for next year, our market advantage will once again be maximized. As the development of the subsequent product, HBM4 progresses rapidly, SK Hynix’s HBM will enter a new phase next year. It will be a year worth celebrating.’
Due to the development plans in 2024, it can be expected that actual products utilizing this memory module will hit the market by the end of 2025 or in 2026. A roadmap shared recently by Trendforce estimates that the initial stack capacity of HBM4 samples will reach 36 GB, with complete specifications expected to be released by JEDEC around the latter half of 2024-2025. Initial customer samples and availability are projected for launch in 2026, indicating that there is still a considerable amount of time before we witness practical applications of the new high-bandwidth memory solution.
With a stack of 36 GB, the product can offer a capacity of 288 GB, with plans for even higher capacities. The maximum speed of HBM3E memory has already reached 9.8 Gbps, so we can expect HBM4 to surpass the 10 Gbps threshold. As for products, NVIDIA’s Blackwell is expected to use HBM3E memory modules, making it either the successor to Blackwell (possibly named after Vera Rubin) or an upgraded version like Hopper H200 (HBM3E), becoming the first product to utilize HBM4.
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