How a photolithography mask is made, detailed explanation below:
The design process involves four steps:
- Discussion of process steps (approx. 1 hour): Process engineers and designers first discuss the design requirements of the mask to clarify the final desired patterns, resolution, and process needs.
- CAD layout design (approx. 2 weeks): Researchers use software like CAD to design the mask patterns.
- CAD layout check (approx. 30 minutes): After the design is completed, technicians verify the correctness and compliance of the design to ensure that all patterns and routing match the process requirements, avoiding problems in subsequent manufacturing.
- File conversion to GDS II format (approx. 30 minutes): The CAD file is converted to the GDS II format, which is the standard file format in mask manufacturing, allowing identification by electron beam writers and laser direct writing equipment. The GDS II file contains geometric information for all lithography layers.
Mask fabrication process:
- Pattern exposure (approx. 4.5 hours): The GDS II file is imported into an electron beam writer or laser direct writing system, and the designed pattern is exposed without using a physical mask.
- Photoresist development (approx. 5 minutes): After exposure, the mask undergoes development, removing the unexposed photoresist and leaving the patterned areas.
- Chrome etching (approx. 5 minutes): The exposed chrome layer is etched away to form the patterned mask. Chrome has good light-blocking properties and is well-suited for use as a masking material. Quartz with a Cr layer is supplied by vendors.
- Inspection of the finished mask (approx. 10 minutes): Finally, microscopic inspection or automated detection equipment is used to examine the mask, ensuring pattern accuracy, line width, defects, and other parameters meet specifications.
In total, it takes a little over two weeks to produce one photolithography mask.
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