I. Overall Strategic Positioning: The AI-Driven New Era of Semiconductors
1.1 Core Insight: AI is Expanding from the Cloud to the Edge
AI was initially concentrated in data centers, such as for GPT model training.
TSMC points out: AI will be ubiquitous (edge AI, end devices, autonomous driving, robotics, etc.).
Driving rapid growth in wafer demand for high-performance computing (HPC), smartphones, automotive electronics, and IoT.
1.2 Market Forecast (by 2030):
Global semiconductor market size will reach USD 1 trillion
Breakdown:
- HPC & AI: 45%
- Smartphones: 25%
- Automotive electronics: 15%
- IoT: 10%
- Others: 5%
II. TSMC Advanced Process Technology Roadmap
2.1 A14 Node (Mass Production Expected in 2028)
Technical Features:
- 2nd generation nanosheet transistors
- Shrinking pitch (tighter layout, improved PPA)
- Innovative device architecture + nano-flex technology (boosts performance and power efficiency)
Expected Outcomes:
- Development ahead of schedule, yield meets standards
- Super power rail version (2029): further enhances power delivery
2.2 A16 Node (Mass Production Expected in 2026)
Technical Features:
- Uses Super Power Rail (SPR)
- Backside power delivery: reduces IR drop, increases density
- Optimized for data center/HPC applications
2.3 N2 Series (Mass Production Starts in H2 2025)
- N2: First mass production node adopting nanosheet structure at scale
- 256Mb SRAM average yield over 90%
- Suitable for energy-efficient computing and mobile devices
- N2P (H2 2026): more power-efficient and higher performance than N2
- N2X (2027): designed for ultimate performance, ~10% frequency boost
Customer Adoption:
- HPC/AI adoption accelerating, 2nd-year NTO count ~4x that of N5
2.4 N3 Series: The Peak and Conclusion of FinFET Technology
- N3E: Already in mass production with good yield, used for flagship phones, HPC, AI
- N3P (Mass Production Q4 2024): successor to N3E
- N3X: tailored for high-frequency CPUs
- N3A: automotive-grade
- N3C: entry-level products
- N3 series is the final FinFET family, with a long lifecycle and broad applicability
III. Advanced Packaging and System Integration Technologies (3DFabric®)
3.1 3D Packaging Family (TSMC – SoIC®, CoWoS®, InFO®)
- SoIC®: 3D chip stacking technology to enhance performance and bandwidth
- N3 stacked with N4 (6μm pitch) → mass production in 2025
- A14 stacked with N2 → mass production in 2029
- Already in mass production since 2022
Future:
- CoWoS® / InFO®: ideal for high-bandwidth memory (HBM) and logic chip integration
- SoW (System on Wafer):
- Wafer-level system integration (SoW-X tech expected 2027)
- For high-speed AI transmission and compute-intensive logic (e.g., H100, B200 AI chip architectures)
IV. Power Supply and System Energy Efficiency
4.1 Integrated Power Solutions (Dedicated for AI)
- AI power consumption is rising rapidly, compute units reaching kilowatt (kW) levels
- TSMC proposes single-chip PMIC + inductor solution, with 5x power density of traditional PCBs
- eDTC/DTC tech in CoWoS-L: aids filtering and stabilizes power supply
V. Support for Emerging Applications: AR and Robotics
- AR/VR devices require “lightweight and efficient” design; TSMC offers high-density system integration platforms
- Future humanoid robots will demand ultra-high-density chips
- TSMC invests in high-density power delivery, high-speed computing, and integrated AI accelerators and memory
Summary: TSMC Technology Evolution Roadmap (2024–2030)
| Year | Process Node & Packaging | Application Areas |
|---|---|---|
| 2024 | N3P, CoWoS-L, power filtering | Smartphones, HPC, AI |
| 2025 | N2, SoIC N3 stacked with N4 | Data centers, Edge AI |
| 2026 | N2P, A16 | Higher chip density, backside power |
| 2027 | N2X, SoW-X | High-performance AI integration systems |
| 2028 | A14 | New architecture + nano-flex transistors |
| 2029 | A14 Super Rail Version, SoIC A14 stacked with N2 | Ultimate AI chip integration |
| 2030 | Wafer-level system, mature high-density power delivery | Humanoid robots, AR |
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